MIP0223SY mos equivalent, silicon mos.
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent pr.
1
Intelligent Power Devices (IPDs)
s Electrical Characteristics (TC = 25 ± 2°C)
Parameter Output frequency Control fun.
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